Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

Description:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage 'Vds': 55 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V
Maximum Drain Current 'Id': 110 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 146(max) nC
Rise Time (tr): 101 nS
Drain-Source Capacitance (Cd): 781 pF
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package Included:
10 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor